Last edited by Fenrigal
Sunday, August 2, 2020 | History

1 edition of Buried-ridge-striped planar GaAlAs/GaAs lasers found in the catalog.

Buried-ridge-striped planar GaAlAs/GaAs lasers

by Song Jae Lee

  • 11 Want to read
  • 30 Currently reading

Published .
Written in

    Subjects:
  • Gallium arsenide,
  • Semiconductor lasers

  • Edition Notes

    Statementby Song Jae Lee
    The Physical Object
    Paginationviii, 148 leaves :
    Number of Pages148
    ID Numbers
    Open LibraryOL25901667M
    OCLC/WorldCa22575393

    We probe and control the optical properties of emission centers forming in radial heterostructure GaAs-AlGaAs nanowires and show that these emitters, located in AlGaAs layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy, and occupancy state on a nanosecond time scale. multiphysics modeling using comsol Download multiphysics modeling using comsol or read online books in PDF, EPUB, Tuebl, and Mobi Format. Click Download or Read Online button to get multiphysics modeling using comsol book now. This site is like a library, Use search box in .

    This chapter focuses on developing coatings for use as waveguides for integrated optics and photonics. Thin (or thick) films of silica-based inorganic materials and organic-inorganic hybrids can be easily obtained using the sol-gel and spin-coating method, followed by rapid thermal annealing to obtain dense films of good optical quality. The waveguide thermal, structural, and optical. Projections of short wavelength semiconductor laser performance are based primarily on historical charts covering progress in eight different aspects of laser technology. Most of these improvements are common to lasers of all wavelengths, but some may have special relevance to the short wavelength limits. Examples are metal-organic chemical vapor deposition and molecular beam epitaxy methods.

    of A1GaAs Channeled-Substrate-Planar Lasers .. (Used by permission of Solarex Corporation, Newtown, PA and Southern Methodist University, Dallas, TX ) C. Effects of Ion Sputtering on the Surface Composition of GaAs Laser Diode Facets .. D. Intrusions in . Vertival-cavity surface-emitting lasers (VCSELs) are one of the most promising new developments in laser physics. Covering such a wide range of topics such as operation principles, design considerations and performance measurements, this book is the first of its kind in that it provides readers with a comprehensive account of the latest technological developments in VCSEL devices.


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Buried-ridge-striped planar GaAlAs/GaAs lasers by Song Jae Lee Download PDF EPUB FB2

A novel self‐aligned buried‐ridge striped planar (BRSP) GaAlAs/GaAs diode laser structure is presented. The structure was grown by two‐step liquid phase epitaxy using preferential growth and melt etch.

A Ga 1−y Al y As layer with a wide range of Al concentration (y>) is selectively grown outside the ridge and can be an effective melt‐etching by: 6.

A novel self-aligned buried-ridge striped planar (BRSP) GaAlAs/GaAs diode laser structure is presented. The structure was grown by two-step liquid phase epitaxy using preferential growth and melt etch. A Ga 1-y Al y As layer with a wide range of Al concentration (y>) is selectively grown outside the ridge and can be an effective melt-etching by: 6.

Buried-ridge-striped planar GaAlAs/GaAs lasers. By Song Jae Lee. Abstract (Thesis) Thesis (Ph. D.)--University of Florida, (Bibliography) Includes bibliographical references (leaves )(Statement of Responsibility) by Song Jae Lee by Song Jae Lee Topics: Semiconductor lasers (lcsh), Gallium arsenide Author: Song Jae Lee.

Abstract: Complete single longitudinal mode operation of a GaAlAs/GaAs distributed-feedback (DFB) laser has been accomplished by making use of a modulated stripe width (MSW) structure, which is characterized by its simple configuration and versatility, compared with equivalent schemes.

The coupled-mode equations are transformed into the characteristic equation for the DFB laser with arbitrary Cited by:   Buried GaAs filaments are fabricated by growing GaAlAs/GaAs/GaAlAs quantum well (QW) structures on nonplanar substrates by molecular beam epitaxy (MBE).

A crescent profile of the GaAs wires is obtained for [] orientation of the grating lines. This is very attractive for the growth of quantum filaments (QF).Cited by:   Measurements performed with an He-Ne laser. 1y.a) planar GaAlAs-GaAs 2DEG photoresistors ; the GaAlAs thin layer is a window for the um wavelength.

Figure 10 presents a comparison between N-type GaAs and GaAlAs-GaAs planar photoresistors steady state gains ; these experimental results clearly show that the heterojunction reduces the. Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPE S.

Hersee, M. Baldy, P. Assenat, B. De Cremoux, J. Duchemin (Electronic Letters ) Quantum noise and dynamics in quantum well and quantum wire lasers Y.

Arakawa, K. Vahala, A. Yariv (Applied Physics Letters ). Summary form only given. 3 W CW output power is obtained from InGaAs-InGaAsP-InGaP uncoated, μm-wide-stripe, quantum well diode lasers grown by low-pressure MOCVD on exact () GaAs.

A two‐step metalorganic vapor phase epitaxial growth technique for fully planar GaAs/GaAlAs single quantum well buried heterostructure lasers with oxygen‐doped semi‐insulating blocking layers is described. GaAlAs blocking layer with resistivity above 10 6 Ω cm is reproducibly obtained by introducing oxygen at a concentration above ppm during the growth.

A stripe laser structure called a planar stripe was developed. The edge blurring of the current path is improved by the fact that the current spreads only in the thin p-Al x Ga 1-x As layer with relatively high resistance. The planar stripe laser has a small threshold current resulting from the small current spreading effect and a good thermal contact.

The far-field patterns and the wavefronts of planar stripe-geometry GaAIAs/GaAs lasers, as well as their variation with pumping current, have been investigated with the help of apparatus based on the Michelson interferometer. Experimental results were compared to the theoretical model of the planar stripe-geometry heterostructure injection laser, using a dielectrical slab and Epstein layer.

Lee S J, Ramaswarmy R V, Zory P S and Figueroa L Buried-ridge striped planar GaAlAs/GaAs lasers with a wide range of effective index steps. Try the new Google Books. Check out the new look and enjoy easier access to your favorite features Chapter 2 ModeStabilized Semiconductor Lasers for and 11 16μm Regions doping DSDs Dutta effect emission wavelength emitters emitting epitaxial experimental fabrication facet failure Fonstad function GaAlAs GaAs gain-guided lasers.

We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating µm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in.

Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides W. Streifer, D.R. Scifres, R.D. Burnham (IEEE Journal of Quantum Electronics ) Radiation pattern of light scattering from the core region of dielectric-slab-optical waveguides S.

Miyanaga, M. Imai, T. Asakura (IEEE Journal of Quantum Electronics ). Zusammenfassung. Für große Leistungen und hohe Grenzfrequenzen sind Injektions-Laser der einfacheren LED deutlich überlegen.

Lange Übertragungsstrecken und große Datenflußraten erfordern die Verwendung von Laserdioden, wenngleich die Ansteuerung und das Betriebsverhalten dieser Bauelemente wesentlich komplizierter als bei LEDs sind. The operation and performance of the first etched-mirror high-loss (ray unstable) semiconductor diode lasers are reported and discussed.

This is an alternate approach to conventional plane-parallel stripe geometry diode lasers or monolithic laser arrays for obtaining improved mode control and higher power. References Tang, C. L., Statz, H., and DeMars, G., “Spectral output and spiking behavior of solid state lasers,” Journal of Applied Physics, vol.

34, pp. Heterojunction semiconductor light sources P-type n-type P-type n-type GaAlAs GaAlAs GaAs. eV eV GaAs Planar LED Ohmic. Audio Books & Poetry Community Audio Computers, Technology and Science Music, Arts & Culture News & Public Affairs Non-English Audio Spirituality & Religion Librivox Free Audiobook Intern & Career Services Conversations with Myself Solving Your Health Puzzle Millionaire Girls Club AND NOW THAT WE HAVE YOUR ATTENTION.

We have reported a method to achieve small half-wave voltage for high-speed MMI-MZI GaAs/GaAlAs electro-optic modulators and switches with co-planar electrodes for polarization-insensitive operation. By biasing the devices at the reverse breakdown region, the voltage to achieve switching can be greatly reduced about 23 V to 3 V.

Such a small half-wave voltage would be very important for high.Abstract. One of the most promising applications of GaAs technology is in ultrafast digital integrated circuits [1–]. Gate delays as short as 15 ps for logic based on self-aligned GaAs MESFETs [] at K and of ps at K [, ] and ps at 77 K [73] for logic based on modulation doped AlGaAs-GaAs transistors (also called HEMTs) have been achieved, making GaAs circuits [email protected]{osti_, title = {Activation energy of degradation in GaAlAs double heterostructure laser diodes}, author = {Imai, H and Hori, K and Takusagawa, M and Wakita, K}, abstractNote = {Aging test of GaAlAs double heterostructure (DH) laser diodes is performed in the temperature range of /sup 0/C.

In samples for the aging test, AuSn-alloy bonding solder is used and the facet.